Low-temperature magnetotransport of the narrow-gap semiconductor FeSb2
نویسندگان
چکیده
منابع مشابه
Semiconductor waveguide inversion in disordered narrow band-gap materials
It has been previously demonstrated that it is possible to form the NOT gate in a coupled semiconductor waveguide structure in III–V materials. However, to this point, investigations have assumed the materials to be perfect. In this article, we present results of a semiconductor waveguide inverter in GaAs and InAs with disordered material effects included in the simulation. The behavior of the ...
متن کاملNarrow-gap semiconductor magnetic field sensors and applications
Narrow-gap semiconductors have been used for decades in the fabrication of magnetic field sensors, such as magnetoresistors and Hall sensors. Magnetic field sensors are, in turn, used in conjunction with permanent magnets to make contactless potentiometers and rotary encoders. This sensing technology offers the most reliable way to convert a mechanical movement into an electrical signal, and is...
متن کاملThe semiconductor-to-ferromagnetic-metal transition in FeSb2
We propose FeSb2 to be a nearly ferromagnetic small gap semiconductor, hence a direct analog of FeSi. We find that despite different compositions and crystal structures, in the local density approximation with on-site Coulomb repulsion correction (LDA+U) method magnetic and semiconducting solutions for U=2.6 eV are energetically degenerate similar to the case of FeSi. For both FeSb2 and FeSi (F...
متن کاملLow Temperature Magnetotransport in 2D GaN Quantum Wells
Hall mobility of the two dimensional electron gas in GaN quantum wells are calculated in the temperature range 1K-14K incorporating deformation potential acoustic, piezoelectric, background and remote ionized impurity scatterings. The Boltzmann transport equation is solved by a numerical iterative technique using Fermi-Dirac statistics. The variations of longitudinal magnetoresistivity with mag...
متن کاملEnhanced Room-Temperature Geometric Magnetoresistance in Inhomogeneous Narrow-Gap Semiconductors.
A symmetric van der Pauw disk of homogeneous nonmagnetic indium antimonide with an embedded concentric gold inhomogeneity is found to exhibit room-temperature geometric magnetoresistance as high as 100, 9100, and 750,000 percent at magnetic fields of 0.05, 0.25, and 4.0 teslas, respectively. For inhomogeneities of sufficiently large diameter relative to that of the surrounding disk, the resista...
متن کاملذخیره در منابع من
با ذخیره ی این منبع در منابع من، دسترسی به آن را برای استفاده های بعدی آسان تر کنید
ژورنال
عنوان ژورنال: Physical Review B
سال: 2011
ISSN: 1098-0121,1550-235X
DOI: 10.1103/physrevb.84.205215